For 10nm and more advanced process technology, only Intel, TSMC and Samsung have achieved mass production. A few days ago, Digitimes compiled a comparison chart of the evolution of technical indicators of the three major fabs at 10nm, 7nm, 5nm, 3nm, and 2nm. Transistor density (the number of transistors per square millimeter) is used here.
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In the 10nm era, Intel achieved 106 million transistors per square millimeter, twice that of TSMC and Samsung.
In the 7nm era, Intel estimates that it can achieve 180 million transistors per square millimeter, TSMC 97 million per square millimeter, and Samsung 95 million per square millimeter.
In the 5nm era, Intel estimates that it can achieve 300 million transistors per square millimeter, TSMC 173 million per square millimeter, and Samsung 127 million per square millimeter.
Looking at it this way, Intel’s 10nm is equivalent to TSMC/Samsung 7nm, and Intel 7nm is equivalent to TSMC/Samsung 5nm.
However, it can be clearly seen from 5nm that Samsung has clearly fallen behind in transistor density.
Looking at 3nm, TSMC can achieve about 290 million units per square millimeter, and Samsung can achieve 170 million units per square millimeter. Samsung’s indicators are even worse than Intel 7nm.